光电社区 › 光学镀膜技术及膜系设计 › 讨论下sio2在镀膜时冲o2的问题

guangang 发表于 2009-4-13 12:56:27

充不充对吸收和折射率基本上没太大区别,对附着性和飘移有一点影响

AR_coating 发表于 2009-4-14 01:57:09

14# guangang


O2 can make sure the film is fully oxidized.
Too much O2 cause the tooling factor changes, film packing density decreases, refractive index decreases. The adhesion might also get worse.
Not enough O2 can't fully oxidize the film, so you can't get a reliable film if the film is exposed in air for a long time.

tianguosky1 发表于 2009-4-14 08:08:22

14楼的，能不能给出结论的合理解释，谢谢！！！

AR_coating 发表于 2009-4-15 01:07:26

16# tianguosky1

Too much O2 increases the chamber pressure, if your crystal is not located at the same height of the substrate, the tooling factor changes.

Too much O2 increases the voids inside the SiO2 film, let's say, you want N_SiO2=1.45, now you can get 90% SiO2, the left 10% is void, which is Air, so the final film's refractive index decreases (0.9*1.45+0.1*1=1.405).

Less O2 causes the film not fully oxidized, after a long time expose in the air, the O2 in the air may gradually oxidize the film and change the refractive index.

riy2000 发表于 2009-4-19 00:21:01

充氧是肯定会对材料折射率有所改变的，但是对膜牢影响不大，除非充氧太多，真空度很低了。

likesongs 发表于 2009-8-23 11:58:01

14#,16#说的非常好!太感谢了!

YJD 发表于 2009-9-2 21:35:15

充氧后真空室中压强减少

ipshjh2005 发表于 2011-7-13 13:09:23

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killjackson 发表于 2011-7-14 12:52:18

这个还真不能一概而论！
要具体到不同的镀膜条件下去。。。

fasces9 发表于 2011-7-25 11:52:24

sio2充氧会使产品发蒙，光洁度看起来好一点

yufe16fisher 发表于 2011-7-25 12:03:49

氧气多了，附着力很差

wcb674399566 发表于 2011-9-11 10:36:34

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