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PECVD is Plasma Enhenced CVD Deposition method. So this method is quite different from E-Beam deposition system. If you deposit materials like SiO2, the vacuum is not enough, but if can not reach even high vacuum, 5E-1Pa is ok la. Remember: the depostion pressure in chamber is about several tens mT or even more than one hundred mT. 1 atm=750T=750000mT=1E+5Pa |