Ho3＋掺杂Sc2SiO5激光晶体生长与光谱性能研究

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Ho3＋掺杂Sc2SiO5激光晶体生长与光谱性能研究
Growth and Spectral Properties of Sc2SiO5 Laser Crystal Doped with Ho3＋
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作　　者：李璇[1,2] 麻尉蔚[2] 马凤凯[2] 狄聚青[3] 郑丽和[2] 姜大鹏[2] 苏良碧[2] 杨秋红[1] 徐军[2]
LI Xuan, MA Wei-wei, MA Feng-kai, DI Ju-qing, ZHENG Li-he,  JIANG Da-peng, SU Liang-bi, YANG Qiu-hong, XU Jun （1. Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;  2. Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 201899, China;  3. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China）
机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200444 [2]中国科学院上海硅酸盐研究所,上海201899 [3]中国科学院上海光学精密机械研究所,上海201800
出　　处：《人工晶体学报》 EI CSCD 2014年第43卷第6期 1327-1331页,共5页
Journal of Synthetic Crystals
基　　金：上海市自然科学基金（13ZR1446100,12JC1409100）; 国家自然科学基金（91222112,61205171,51272264）
摘　　要：采用提拉法分别生长了具有高光学质量的0.5at%和1.0at%的Ho∶Sc2SiO5（Ho∶SSO）激光晶体。研究表明晶体空间群为C2/c,晶胞参数为a=0.99723 nm,b=0.64261 nm,c=1.16843 nm,β=103.9°。Ho3＋在SSO基质中的分凝系数为0.82。Ho∶SSO晶体在2085 nm处发射截面为1.12×10^-20cm2,发射光谱呈现一个1850~2150 nm的宽发射带。当粒子数反转比率β=0.25时,增益截面σg即开始出现正增益。综合评估了晶体的激光性能,表明Ho∶SSO晶体是一种有潜力的2μm波段激光介质。
Sc2SiO5 ： 0.5at% Ho （Ho： SSO） and Sc2SiO5 ： 1.0at% Ho bulk crystals were obtained by Czochralski method. The results indicate that the space group of Ho： SSO crystal is C2/c. The cell parameters were calculated to be a=0.99723 nm,b=0.64261 nm,c=1.16843 nm,β=103.9°. The segregation coefficient of Ho3 ＋ in SSO host were calculated to be 0.82. The emission cross section in 2085 nm is 1.12 ×10^-20cm2. The broad emission spectrum is extended from 1850 nm to 2150 nm. When the inversion ratio equals to 0.25, the gain cross-section appeared to be positive. Laser properties were evaluated and all these data indicated that Ho： SSO is promising for 2 μm laser operation.
关键词：Sc2SiO5 激光晶体 提拉法 分凝系数 发射光谱
Sc2SiO5 ; laser crystal ; Czochralski method ; segregation coefficient ; emission spectrum ;

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